IRF640B/irfs640b IRF640B/irfs640b 200v n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switching dc/dc converters, switch mode power supplies, dc-ac converters for uninterrupted power supply and motor control. features ? 18a, 200v, r ds(on) = 0.18 ? @v gs = 10 v ? low gate charge ( typical 45 nc) ? low crss ( typical 45 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted * drain current limited by maximum junction temperature. thermal characteristics symbol parameter IRF640B irfs640b units v dss drain-source voltage 200 v i d drain current - continuous (t c = 25c) 18 18 * a - continuous (t c = 100c) 11.4 11.4 * a i dm drain current - pulsed (note 1) 72 72 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 250 mj i ar avalanche current (note 1) 18 a e ar repetitive avalanche energy (note 1) 13.9 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns p d power dissipation (t c = 25c) 139 43 w - derate above 25c 1.11 0.35 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter IRF640B irfs640b units r jc thermal resistance, junction-to-case 0.9 2.89 c / w r cs thermal resistance, case-to-sink 0.5 -- c / w r ja thermal resistance, junction-to-ambient 62.5 62.5 c / w to-220 irf series g s d s d g to-220f irfs series g s d www.kersemi.com
IRF640B/irfs640b (note 4) (note 4, 5) (note 4, 5) (note 4) electrical characteristics t symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 200 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.2 -- v/c i dss zero gate voltage drain current v ds = 200 v, v gs = 0 v -- -- 10 a v ds = 160 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 9.0 a -- 0.145 0.18 ? g fs forward transconductance v ds = 40 v, i d = 9.0 a -- 13 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1300 1700 pf c oss output capacitance -- 175 230 pf c rss reverse transfer capacitance -- 45 60 pf switching characteristics t d(on) turn-on delay time v dd = 100 v, i d = 18 a, r g = 25 ? -- 20 50 ns t r turn-on rise time -- 145 300 ns t d(off) turn-off delay time -- 145 300 ns t f turn-off fall time -- 110 230 ns q g total gate charge v ds = 160 v, i d = 18 a, v gs = 10 v -- 45 58 nc q gs gate-source charge -- 6.5 -- nc q gd gate-drain charge -- 22 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 18 a i sm maximum pulsed drain-source diode forward current -- -- 72 a v sd drain-source diode forward voltage v gs = 0 v, i s = 18 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 18 a, di f / dt = 100 a/ s -- 195 -- ns q rr reverse recovery charge -- 1.47 -- c
IRF640B/irfs640b 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v ! notes : 1. 250 " s pulse test 2. t c = 25 # i d , drain current [a] v ds , drain-source voltage [v] 0 102030405060 0.0 0.2 0.4 0.6 0.8 1.0 v gs = 20v v gs = 10v ! note : t j = 25 # r ds(on) [ $ ], drain-source on-resistance i d , drain current [a] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c ! notes : 1. v ds = 40v 2. 250 " s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10 12 v ds = 100v v ds = 40v v ds = 160v ! note : i d = 18 a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 c oss c iss = c gs + c gd (c ds = shorted) c os s = c ds + c gd c rss = c gd ! notes : 1. v gs = 0 v 2. f = 1 mhz c rss c iss capacitance [pf] v ds , drain-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 -1 10 0 10 1 150 # ! notes : 1. v gs = 0v 2. 250 " s pulse test 25 # i dr , reverse drain current [a] v sd , source-drain voltage [v] figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics
IRF640B/irfs640b 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 s 1 ms dc 100 ms 10 ms operation in this area is limited by r ds(on) ! notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 4 8 12 16 20 i d , drain current [a] t c , case temperature [ # ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) ! notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ! notes : 1. v gs = 10 v 2. i d = 9.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ! notes : 1. v gs = 0 v 2. i d = 250 " a bv dss , (normalized) drain-source breakdown vol tage t j , junction temperature [ o c] figure 9-1. maximum safe operating area for IRF640B figure 10. maximum drain current vs case temperature figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9-2. maximum safe operating area for irfs640b
IRF640B/irfs640b 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ! notes : 1. z % jc (t) = 0.9 # /w m ax. 2. d uty factor, d=t 1 /t 2 3. t jm - t c = p dm * z % jc (t) sin gle pu lse d=0.5 0.02 0.2 0.05 0.1 0.01 z % jc (t), t herm al r esponse t 1 , square w ave pulse duration [sec] figure 11-1. transient thermal response curve for IRF640B t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ! notes : 1. z % jc (t) = 2.89 # /w m ax. 2. d uty factor, d=t 1 /t 2 3. t jm - t c = p dm * z % jc (t) sin gle pu lse d=0.5 0.02 0.2 0.05 0.1 0.01 z % jc (t), therm al r esponse t 1 , square w ave pulse duration [sec] figure 11-2. transient thermal response curve for irfs640b t 1 p dm t 2
IRF640B/irfs640b charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
IRF640B/irfs640b dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
IRF640B/irfs640b 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220
IRF640B/irfs640b (7.00) (0.70) max1.47 (30 3.18 0.05 to-220f
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